Authors: V V Bhide, B D Sutar, K V Sukhatankar, M M Belekar, D Kanjilal, A M Narasale
Single crystal n+ GaAs substrates of <100> orientation have been implanted at room temperature with 197Au ions at energy 100 MeV to the doses of 1x1012, 1x1013, 1x1014 ions/cm2. The as implanted current-voltage (I-V) characteristic of samples is studied and the optical investigations in near IR and mid IR-range have been made. The implanted samples were isochronally annealed by RTA system at different temperatures and the room temperature electrical characterization and the optical investigations are reported.
Keywords: Ion implantation, electrical characterisation, annealing, optical density.