DOI: 10.5176/2251-1857_M317.8

Authors: Abhishek Bihari, Dr. Rakesh G. Mote, Dr. Asim Tewari and Dr. R. Balasubramaniam


Abstract: In this work, focused ion beam (FIB) implantation with 30 keV Ga+ (gallium ions) into single and polycrystalline diamond (SCD & PCD) films have been studied to understand the damage formation in diamond films. Characterization techniques including scanning electron microscopy (SEM), x-ray diffraction, and Raman spectroscopy has been used to study the physiochemical properties of diamonds. Microwave plasma chemical vapor deposition (MPCVD) has been used to develop PCD film. Damage formation in SCD & PCD films has been studied in two different milling modes i.e. mill for depth (MFD) / single pass milling and mill for time (MFT) / multi-pass milling. Different beam currents (100pA, 200pA, 500pA and 1000pA) were used to investigate the interactions by milling trenches and creating cavities in the diamond films. Experiments resulted in defects, such as side wall tapering effect, and swelling. AFM imaging helped to find out the trend between beam current and feature dimensions. The measured features and parameters used for FIB milling were further used to find out material removal rate of diamond films. The electron backscattered diffraction (EBSD) analysis was done to find the dose for amorphization of the sample surface under FIB irradiation.

Keywords: Diamond films, focused ion beam, characterization of diamond films, SEM, XRD, AFM, EBSD

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