DOI: 10.5176/2251-1857_M318.4
Authors: Cheng-Wei Liu, Yu-Hsin Weng, Hsiang-Chen Wang, Chie-Tong Kuo, Ming-Yen Lu and Shih-Wei Feng
Abstract: In this study, the n-type MoS2 monolayer flakes are grown using chemical vapor deposition (CVD), and the p-type Cu2O thin film are grown using Electrochemical deposition method. Transmission electron microscopy (TEM) is used for crystal structure analysis of the grown MoS2 flakes. By observing periodicity diffraction points from the corresponding selected area diffraction pattern (SAD) on Cu2O thin film indicates the monocrystalline with our grown sample. Moreover, with the help of Raman spectroscopy, Multiphoton excitation microscope, Atomic force microscope (AFM) and Photoluminescence (PL) measurements we are able to verify the monolayer structure of the MoS2 flakes. After the preliminary process of the grown MoS2 flakes, the sample is then transferred onto Cu2O thin film to finish the p-n heterogeneous structure. The results are verified via Scanning electron microscope (SEM), SHG, and Raman mapping measurements and then conducted PL measurements to analyze the luminous energy gap of the two materials. In the future, electric properties of the sample will be measured and the positive oxide trap state characteristic of the element will be studied. We hope to apply such MoS2 element on biosensors to detect different DNA structures.
Keywords: Photoelectrochemical; CVD; MoS2; Cu2O.
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