The Influence of Initial Stress on The Dispersion Relations for Shear Horizontal Waves in Semiconductor/Piezoelectric Structures

DOI: 10.5176/2251-1911_CMCGS16.26

Authors: Abo-el-nour N. Abd-alla and Hala M. Hossen

Abstract: In this work, we investigated analytically the dispersion relations for shear horizontal wave propagation in a piezoelectric half space covered by a semiconductor film with initial stress effect. The semiconducting layer is affected influenced by initial stress and the interface between the piezoelectric substrate and the semiconductor layer is imperfectly bonded. The effect of initial stress on the dispersion relation is studied in detail for piezoelectric Barium Titanate BaTiO3 and semiconductor silicon. The obtained results provide a predictable and theoretical basis for applications of piezoelectric and semiconductor composites to acoustic wave devices.

Keywords: Initials stress; Shear-horizontal surface waves; Piezoelectric semiconductors; Dispersion relation; Amplification of the Bleustein–Gulyaev waves.