DOI: 10.5176/2301-3516_OPAP13.30

Authors: V V Bhide, B D Sutar, K V Sukhatankar, M M Belekar, D Kanjilal, A M Narasale


Single crystal n+ GaAs substrates of <100> orientation have been implanted at room temperature with 197Au ions at energy 100 MeV to the doses of 1x1012, 1x1013, 1x1014 ions/cm2. The as implanted current-voltage (I-V) characteristic of samples is studied and the optical investigations in near IR and mid IR-range have been made. The implanted samples were isochronally annealed by RTA system at different temperatures and the room temperature electrical characterization and the optical investigations are reported.

Keywords: Ion implantation, electrical characterisation, annealing, optical density.


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