The Effect of Varied Last Barrier Thickness on ESD and Optical Properties of GaN-based LEDs

DOI: 10.5176/2301-3516_OPAP13.17

Authors: C. K. Wang*, Y. Z. Chiou, J. Lee, J. J. Tang, W. S. Chen, C. M. Cheng, and D. H. Lee, C. Y. Chu, T. H. Chiang, S. J. Chang, and S. P. Chang, T. K. Lin, K. H. Chen

Abstract:

In this study, the electro-optical properties and electrostatic discharge (ESD) endurance of GaN-based light-emitting diodes (LEDs) with varied last GaN barrier thickness are studied and demonstrated. As the last GaN barrier thickness increased, the light output power on the nitride-based LED was increased. The improvement of optical property can be attributed to the increase in carrier confinement. However, the ESD ability was not enhanced as the last GaN barrier thickness increased. It is due to the similar performance of capacitance-voltage (C-V) curve on these fabricated LEDs.

Keywords: LED;GaN; last barrier; ESD; EQE